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IPB054N06N3GATMA1
影像僅供參考,以產品規格為準

IPB054N06N3GATMA1

型號描述:
N-Channel 60 V 80A (Tc) 115W (Tc) Surface Mount PG-TO263-3
MOSFET N-CH 60V 80A D2PAK
型號:
IPB054N06N3GATMA1
品牌:
Infineon Technologies
交期:
5-8工作天
原廠包裝量:
1000+NT$30.8104
2000+NT$29.27
5000+NT$28.1696
10000+NT$27.2372
起訂量:1000倍增量:1
價格:NT$30.8104數量:

合計:NT$30810

Series
OptiMOS™
Packaging
Tape & Reel (TR)
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
5.4mOhm @ 80A, 10V
Vgs(th) (Max) @ Id
4V @ 58µA
Gate Charge (Qg) (Max) @ Vgs
82nC @ 10V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
6600pF @ 30V
FET Feature
-
Power Dissipation (Max)
115W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D²PAK (TO-263AB)
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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