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首頁 > Infineon Technologies代理商 > IPA65R660CFDXKSA1
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IPA65R660CFDXKSA1

型號描述:
N-Channel 650 V 6A (Tc) 27.8W (Tc) Through Hole PG-TO220-3-111
MOSFET N-CH 650V 6A TO220
型號:
IPA65R660CFDXKSA1
品牌:
Infineon Technologies
交期:
5-8工作天
原廠包裝量:
起訂量:1 倍增量:1
價格: NT$0 數量:

合計: NT$0

Packaging
Tube
Package / Case
TO-220-3 Full Pack
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Current - Continuous Drain (Id) @ 25°C
6A (Tc)
Rds On (Max) @ Id, Vgs
660mOhm @ 2.1A, 10V
FET Feature
-
Power Dissipation (Max)
27.8W (Tc)
Vgs(th) (Max) @ Id
4.5V @ 200µA
Supplier Device Package
PG-TO220-3-111
Grade
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
650 V
Gate Charge (Qg) (Max) @ Vgs
22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
615 pF @ 100 V
Qualification
-
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