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首頁 > Infineon Technologies代理商 > IPA65R190C7XKSA1
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IPA65R190C7XKSA1

型號描述:
N-Channel 650 V 8A (Tc) 30W (Tc) Through Hole PG-TO220-FP
型號:
IPA65R190C7XKSA1
品牌:
Infineon Technologies
交期:
6-9工作天
原廠包裝量:
1
1+NT$71.1337
起訂量:1 倍增量:1
價格: NT$71.1337 數量:

合計: NT$71

Packaging
Tube
Package / Case
TO-220-3 Full Pack
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Current - Continuous Drain (Id) @ 25°C
8A (Tc)
Rds On (Max) @ Id, Vgs
190mOhm @ 5.7A, 10V
FET Feature
-
Power Dissipation (Max)
30W (Tc)
Vgs(th) (Max) @ Id
4V @ 290µA
Supplier Device Package
PG-TO220-FP
Grade
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
650 V
Gate Charge (Qg) (Max) @ Vgs
23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1150 pF @ 400 V
Qualification
-
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