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首頁 > Infineon Technologies代理商 > IMT65R040M2HXUMA1
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IMT65R040M2HXUMA1

型號描述:
碳化矽MOSFET SILICON CARBIDE MOSFET
型號:
IMT65R040M2HXUMA1
品牌:
Infineon Technologies
交期:
5-8工作天
原廠包裝量:
2000
1+NT$288.7696
10+NT$210.1344
100+NT$175.112
500+NT$157.2704
2000+NT$133.1512
起訂量:1 倍增量:1
價格: NT$288.7696 數量:

合計: NT$289

Packaging
Tape & Reel (TR)
Package / Case
8-PowerSFN
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Technology
SiCFET (Silicon Carbide)
FET Type
N-Channel
Current - Continuous Drain (Id) @ 25°C
58.7A (Tc)
Rds On (Max) @ Id, Vgs
36mOhm @ 22.9A, 20V
FET Feature
-
Power Dissipation (Max)
277W (Tc)
Vgs(th) (Max) @ Id
5.6V @ 4.6mA
Supplier Device Package
PG-HSOF-8-2
Grade
-
Drive Voltage (Max Rds On, Min Rds On)
15V, 20V
Vgs (Max)
+23V, -7V
Drain to Source Voltage (Vdss)
650 V
Gate Charge (Qg) (Max) @ Vgs
28 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds
997 pF @ 400 V
Qualification
-
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