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首頁 > Infineon Technologies代理商 > IGT60R190D1SATMA1
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IGT60R190D1SATMA1

型號描述:
氮化鎵場效應管 GAN HV
型號:
IGT60R190D1SATMA1
品牌:
Infineon Technologies
交期:
5-8工作天
原廠包裝量:
2000
起訂量:1 倍增量:1
價格: NT$0 數量:

合計: NT$0

Packaging
Tape & Reel (TR)
Package / Case
8-PowerSFN
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
GaNFET (Gallium Nitride)
FET Type
N-Channel
Current - Continuous Drain (Id) @ 25°C
12.5A (Tc)
Rds On (Max) @ Id, Vgs
-
FET Feature
-
Power Dissipation (Max)
55.5W (Tc)
Vgs(th) (Max) @ Id
1.6V @ 960µA
Supplier Device Package
PG-HSOF-8-3
Grade
-
Drive Voltage (Max Rds On, Min Rds On)
-
Vgs (Max)
-10V
Drain to Source Voltage (Vdss)
600 V
Input Capacitance (Ciss) (Max) @ Vds
157 pF @ 400 V
Qualification
-
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