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GS66502BMRXUSA1

型號描述:
N-Channel 650 V 7.5A (Tc) Surface Mount
GS66502B-MR
型號:
GS66502BMRXUSA1
品牌:
Infineon Technologies
交期:
5-8工作天
原廠包裝量:
250+NT$187.7094
起訂量:250 倍增量:1
價格: NT$187.7094 數量:

合計: NT$46927

FET Type
N-Channel
Technology
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V
Rds On (Max) @ Id, Vgs
260mOhm @ 2.25A, 6V
Vgs(th) (Max) @ Id
2.6V @ 1.75mA
Gate Charge (Qg) (Max) @ Vgs
1.6 nC @ 6 V
Vgs (Max)
+7V, -10V
Input Capacitance (Ciss) (Max) @ Vds
60 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Surface Mount
Supplier Device Package
-
Package / Case
3-SMD, No Lead
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