我的購物車 0
購物車中還沒有商品,趕快選購吧!
首頁 > Diodes Incorporated代理商 > DMT10H052LFDF-13
影像僅供參考,以產品規格為準

DMT10H052LFDF-13

型號描述:
N-Channel 100 V 5A (Ta) 800mW (Ta) Surface Mount U-DFN2020-6 (Type F)
MOSFET BVDSS: 61V~100V U-DFN2020
型號:
DMT10H052LFDF-13
品牌:
Diodes Incorporated
交期:
5-8工作天
原廠包裝量:
10000+NT$4.9233
20000+NT$4.5704
30000+NT$4.4934
起訂量:10000 倍增量:1
價格: NT$4.9233 數量:

合計: NT$49233

Packaging
Tape & Reel (TR)
Package / Case
6-UDFN Exposed Pad
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Current - Continuous Drain (Id) @ 25°C
5A (Ta)
Rds On (Max) @ Id, Vgs
52mOhm @ 4A, 10V
FET Feature
-
Power Dissipation (Max)
800mW (Ta)
Vgs(th) (Max) @ Id
3V @ 250µA
Supplier Device Package
U-DFN2020-6 (Type F)
Grade
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
100 V
Gate Charge (Qg) (Max) @ Vgs
5.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
258 pF @ 50 V
Qualification
-
  • 資訊中心