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首頁 > Diodes Incorporated代理商 > DMT10H010LPS-13
影像僅供參考,以產品規格為準

DMT10H010LPS-13

型號描述:
N-Channel 100 V 9.4A (Ta), 98A (Tc) 1.2W (Ta), 139W (Tc) Surface Mount PowerDI5060-8
MOSFET N-CH 100V 9.4A PWRDI5060
型號:
DMT10H010LPS-13
品牌:
Diodes Incorporated
交期:
5-8工作天
原廠包裝量:
2500
2500+NT$19.6766
5000+NT$19.0806
起訂量:2500 倍增量:1
價格: NT$19.6766 數量:

合計: NT$49192

Packaging
Tape & Reel (TR)
Package / Case
8-PowerTDFN
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Current - Continuous Drain (Id) @ 25°C
9.4A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs
9.5mOhm @ 13A, 10V
FET Feature
-
Power Dissipation (Max)
1.2W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id
3.5V @ 250µA
Supplier Device Package
PowerDI5060-8
Grade
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
100 V
Gate Charge (Qg) (Max) @ Vgs
71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
3000 pF @ 50 V
Qualification
-
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