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SIR882DP-T1-GE3
影像僅供參考,以產品規格為準

SIR882DP-T1-GE3

型號描述:
MOSFET 100 Volts 60 Amps 83 Watts
型號:
SIR882DP-T1-GE3
品牌:
Vishay Semiconductors
交期:
5-8工作天
原廠包裝量:
3000
起訂量:1倍增量:1
價格:NT$0數量:

合計:NT$0

Base Part Number
SIR882
Package / Case
PowerPAK® SO-8
Supplier Device Package
PowerPAK® SO-8
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Power Dissipation (Max)
5.4W (Ta), 83W (Tc)
FET Feature
-
Input Capacitance (Ciss) (Max) @ Vds
1930pF @ 50V
Vgs (Max)
±20V
Gate Charge (Qg) (Max) @ Vgs
58nC @ 10V
Vgs(th) (Max) @ Id
2.8V @ 250µA
Rds On (Max) @ Id, Vgs
8.7mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Current - Continuous Drain (Id) @ 25°C
60A (Tc)
Drain to Source Voltage (Vdss)
100V
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Part Status
Active
Packaging
Tape & Reel (TR)
Series
TrenchFET®
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