我的購物車0
購物車中還沒有商品,趕快選購吧!
SIR626DP-T1-RE3
影像僅供參考,以產品規格為準

SIR626DP-T1-RE3

型號描述:
MOSFET 60V Vds 20V Vgs PowerPAK SO-8
型號:
SIR626DP-T1-RE3
品牌:
Vishay Semiconductors
交期:
5-8工作天
原廠包裝量:
3000
起訂量:1倍增量:1
價格:NT$0數量:

合計:NT$0

Packaging
Tape & Reel (TR)
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
1.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
3.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
78nC @ 7.5V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
5130pF @ 30V
FET Feature
-
Power Dissipation (Max)
104W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® SO-8
Package / Case
PowerPAK® SO-8
  • 精選品牌
    • Samsung
    • ADI
    • Murata
    • Amphenol
    • Roving
    • Walsin
    • Panasonic
    • TE
    • United-Chemi-Con
    • Molex
    • Nichicon
    • Microchip
    • Bourns
    • ROHM
    • AVX
    • Catalyst
    • ST
    • NXP
    • Vishay
    • KEMET
    • TDK
    • FTDI
    • HARTING
    • Mean Well
    • BroadcomLimited
    • Eaton
    • Microsemi
    • Atmel
    • JST
    • Agilent
      • 資訊中心